Ferroelectric RAM is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. FeRAM advantages over flash include: lower power usage, faster write performance and a much greater maximum number of write-erase cycles. Disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations, and higher cost.